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CMOS LDO Regulator Series for Portable Equipments
Standard CMOS LDO Regulators
BH BH FB1WG series, BH LB1WG series, BH FB1WHFV series, LB1WHFV series
Large Current 300mA CMOS LDO Regulators
BH MA3WHFV Series
No.09020EBT02
Description The BH FB1W, BH LB1W and BH MA3W series are low dropout CMOS regulators with 150 mA and 300 mA output that have 1% high accuracy output voltage. The BH FB1W series combines 40A low current consumption and a 70 dB high ripple rejection ratio by utilizing output level CMOS technology. The components can be easily mounted into the small standard SSOP5 and the ultra-small HVSOF5/HVSOF6 packages. Features 1) High accuracy output voltage: 1% 2) High ripple rejection ratio: 70 dB (BH FB1WHFV/WG, BH LB1WHFV/WG) 3) Low dropout voltage: 60 mV (when current is 100 mA) (BH MA3WHFV) 4) Stable with ceramic output capacitors 5) Low Bias current : 40A (IO = 50 mA) (BH FB1WHFV/WG) 6) Output voltage ON/OFF control 7) Built-in over-current protection and thermal shutdown circuits 8) Ultra-small power package: HVSOF5 (BH FB1WHFV, BH LB1WHFV) 9) Ultra-small power package: HVSOF6 (BH MA3WHFV) Applications Battery-driven portable devices and etc. Line up 150mA BH FB1W and BH LB1W Series Part Number BH BH BH BH FB1WG FB1WHFV LB1WG LB1WHFV MA3WHFV series 1.5 1.8 2.5 2.8 2.9 3.0 3.1 3.3 Package HVSOF6 FB1W b , BH a LB1W b Part Number: B H a Symbol MA3W b 1.5 1.8 1.85 2.5 2.8 2.9 3.0 3.1 3.3 Package SSOP5 HVSOF5 SSOP5 HVSOF5
300mA BH Part Number BH
MA3WHFV
Part Number: B H a Symbol
a
b
Details Output Voltage Designation Output Voltage (V) Output Voltage (V) 15 1.5V (Typ.) 2.9V (Typ.) 29 18 1.8V (Typ.) 3.0V (Typ.) 30 1J 1.85V (Typ.) 3.1V (Typ.) 31 25 2.5V (Typ.) 3.3V (Typ.) 33 28 2.8V (Typ.) Package: G : SSOP5 HFV : HVSOF5
a
b
Details Output Voltage Designation Output Voltage (V) Output Voltage (V) 15 1.5V (Typ.) 2.9V (Typ.) 29 18 1.8V (Typ.) 3.0V (Typ.) 30 25 2.5V (Typ.) 3.1V (Typ.) 31 28 2.8V (Typ.) 3.3V (Typ.) 33 Package: HFV : HVSOF6
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1/8
2009.11 - Rev. B
BH FB1WG series, BHFB1WHFV series, BH LB1WG series, BHLB1WHFV series, Absolute maximum ratings (Ta = 25C)
Parameter Applied supply voltage Power dissipation Operating temperature range Storage temperature range Symbol VMAX Pd Topr Tstg
BH MA3WHFV series,
Technical Note
Limits -0.3 ~ +6.5 680 (HVSOF6) 410 (HVSOF5) 540 (SSOP5) -40 ~ +85 -55 ~ +125
Unit V mW C C
Recommended operating range
Parameter Power supply voltage BH Output current BH BH MA3W FB1W LB1W IOUT Symbol VIN Min. 2.5 Typ. Max. 5.5 300 150 150 Unit V mA mA mA
Recommended operating conditions
Parameter Input capacitor Output capacitor Noise decrease capacitor Symbol CIN Co Cn Min. 0.1 1.0 Typ. 0.01 Max. 0.22 Unit F F F Conditions Ceramic capacitor recommended Ceramic capacitor recommended Ceramic capacitor recommended
BH
FB1WHFV/WG , BH
Parameter Symbol VOUT I GND I STBY RR LTV1 LTV2 VSAT VDL1 VDL01 ILMAX
LB1WHFV/WG
Min. 550 1.5 -0.3 Typ. Max. 70 1.0 450 20 30 2200 VIN 0.3 Unit V A A dB mV mV mV mV mV mA mA k V V Vo=0V Conditions
VOUT
40 70 50 50 250 2 10 250 50 1100 -
I SHORT RSTB STBY control voltage ON OFF VSTBH VSTBL
BH
MA3WHFV
Parameter Symbol VOUT I GND I STBY RR VSAT1 VDL1 VDL01 VDL02 ILMAX I SHORT Min. Typ. VOUT 65 60 60 2 6 18 100 600 100 95 1.0 90 20 30 90 Max. Unit V A A dB mV mV mV mV mA mA IOUT=1mA IOUT=1mA STBY=0V VRR=-20dBv, fRR=1kHz, IOUT=10mA VIN=0.98 X VOUT, IOUT=100mA VIN=VOUT+0.5V to 5.5V IOUT=1mA to 100mA IOUT=1mA to 300mA Vo=VOUT X 0.85 Vo=0V Conditions
ppm/C IOUT=1mA, Ta=-40 to +85C
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2/8
2009.11 - Rev. B
BH FB1WG series, BHFB1WHFV series, BH LB1WG series, BHLB1WHFV series,
BH MA3WHFV series,
Technical Note
Typical characteristics * Output voltage-input voltage
2
BH15LB1WHFV ~ Condition ~ VIN=0 to 5.5V Cin=0.1F
4
BH28FB1WHFV ~ Condition ~ VIN=0 to 5.5V Cin=0.1F
4
BH30MA3WHFV ~ Condition ~ VIN=0 to 5.5V Cin=1.0F
1.5 Output Voltage VOUT[V]
Co=1.0F
3 Output Voltage VOUT[V]
Co=1.0F
3 Output Voltage VOUT[V]
Co=1.0F Cn=none ROUT=3.0k Ta=25C
ROUT=1.5k Ta=25C
ROUT=2.8k Ta=25C
1
2
2
0.5
1
1
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage VIN[V] 4.5 5 5.5
0 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage VIN[V] 4.5 5 5.5
0 0 0.5 1 1.5 2 2.5 3 3.5 Input Voltage VIN[V] 4 4.5 5 5.5
Fig.1 * GND current-input voltage
60
BH15LB1WHFV ~ Condition ~
Fig.2
Fig.3
60
BH28FB1WHFV
100
BH30MA3WHFV ~ Condition ~ VIN=0 to 5.5V
~ Condition ~
50
VIN=0 to 5.5V Cin=0.1F Co=1.0F ROUT=1.5k T a=25C
50
VIN=0 to 5.5V Cin=0.1F Co=1.0F
80 GND Current IGND[A]
Cin=1.0F Co=1.0F Cn=none ROUT=3.0k T a=25C
GND Current IGND[A]
GND Current IGND[A]
40
40
ROUT=2.8k T a=25C
60
30
30
40
20
20
10
10
20
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 55.5 Input Voltage VIN[V]
0 0 0.5 1 1.5 2 2.5 3 3.5 Input Voltage VIN[V] 4 4.5 5 5.5
0 0 0.5 1 1.5 2 2.5 3 3.5 Input Voltage VIN[V] 4 4.5 5 5.5
Fig.4 * Output voltage-output current
2
BH15LB1WHFV ~ Condition ~ VIN=3.5V
Fig.5
Fig.6
3.5 3 2.5 2 1.5 1 0.5 0
BH28FB1WHFV ~ Condition ~ VIN=3.8V VOUT=2.83V to 0V Cin=0.1F Ta=25C
3.5 3 2.5 Output Voltage[V] 2 1.5 1 0.5 0
BH30MA3WHFV ~ Condition ~ VIN=4.0V VOUT=3.03V to 0V Cin=1.0F Co=1.0F Cn=none Ta=25C
1.5 Output Voltage VOUT[V]
VOUT=1.53V to 0V Co=1.0F Ta=25C
Output Voltage VOUT[V]
Cin=0.1F
Co=1.0F
1
0.5
0 0 100 200 300 Output Current IOUT[mA] 400
0
50
100 150 200 Output Current IOUT[mA]
250
300
0
100
200 300 400 500 Output Current IOUT[mA]
600
700
Fig.7 * Dropout voltage-output current
500
BH28FB1WHFV ~ Condition ~ VIN=2.74V
Fig.8
Fig.9
300
BH30MA3WHFV ~ Condition ~ VIN=2.940V IOUT=0 to 300mA Cin=1.0F Co=1.0F Cn=none Ta=25C
400 Dropout Voltage VSAT[mV]
IOUT=0 to 150mA Co=1.0F
250 Dropout Voltage VSAT[mV]
Cin=0.1F Ta=25C
200
300
150
200
100
100
50
0
0 0 50 100 Output Current IOUT[mA] 150 0 50 100 150 200 Output Current IOUT[mA] 250 300
Fig.10
Fig.11
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3/8
2009.11 - Rev. B
BH FB1WG series, BHFB1WHFV series, BH LB1WG series, BHLB1WHFV series, Typical Characteristics * Output voltage-temperature
BH MA3WHFV series,
Technical Note

* Ripple reflection-frequency

* Load response characteristics (CO = 1.0 F)
* Output voltage startup time

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4/8
2009.11 - Rev. B
BH FB1WG series, BHFB1WHFV series, BH LB1WG series, BHLB1WHFV series, Block diagrams
BH MA3WHFV series,
Technical Note
Power supply input Ground Output voltage ON/OFF control (High: ON, Low: OFF) NO CONNECT Voltage output
Output voltage ON/OFF control (High: ON, Low: OFF) Ground Power supply input Voltage output NO CONNECT
Terminal No. Terminal Name Function Power supply input Voltage output Voltage output Noise reducing capacitor ground terminal Ground Output voltage ON/OFF control (High: ON, Low: OFF)
Power dissipation Pd 1. Power dissipation Power dissipation calculation include estimates of power dissipation characteristics and internal IC power consumption and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation. Calculating the maximum internal IC power consumption (PMAX)
2. Power dissipation characteristics (Pd)
Board: 70 mm X 70 mm X 1.6 mm Material: Glass epoxy PCB
Input voltage Output voltage Output current
Board: 70 mm X 70 mm X 1.6 mm Material: Glass epoxy PCB
Board: 70 mm X 70 mm X 1.6 mm Material: Glass epoxy PCB
Fig. 26: HVSOF6 Power Dissipation/ Power Dissipation Reduction (Example)
Fig. 27: HVSOF5 Power Dissipation/ Power Dissipation Reduction (Example)
Fig. 28: SSOP5 Power Dissipation/ Power Dissipation Reduction (Example)
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5/8
2009.11 - Rev. B
BH FB1WG series, BHFB1WHFV series, BH LB1WG series, BHLB1WHFV series,
BH MA3WHFV series,
Technical Note
Input capacitor It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as possible. These capacitors will be used when the power supply impedance increases or when long wiring routes are used, so they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or X7R or better models that offer good temperature and DC bias characteristics and high torelant voltages. Examples of ceramic capacitor characteristics
Rate of change in electrostatic capacitance (%) Rate of change in electrostatic capacitance (%) 120 100 50V torelance 80 60 10V torelance 16V torelance 40 20 0 0 50V torelance 95 90 16V torelance 85 10V torelance 80 75 70 0 Rate of change in electrostatic capacitance (%) 100 120 100 80 60 40 20 0 -25 Y5V X7R X5R
1 2 3 4 DC bias Vdc (V) Fig. 29: Capacitance-bias characteristics (Y5V)
1 2 3 4 DC bias Vdc (V) Fig. 30: Capacitance-bias characteristics (X5R, X7R)
0 25 50 75 Temperature (C) Fig. 31: Capacitance-temperature characteristics (X5R, X7R, Y5V)
Output capacitor To prevent oscillation at the output, it is recommended that the IC be operated at the stable region show in below Fig. It operates at the capacitance of more than 1.0F. As capacitance is larger, stability becomes more stable and characteristic of output load fluctuation is also improved. BH
100
LB1WHFV/WG
Cout=1.0F Ta=+25C
BH
100
FB1WHFV/WG
Cout=2.2F Ta=+25C
BH
100
MA3WHFV
Cout=1.0F Cin=1.0F Ta=+25C
10 ESR() ESR() 1 0.1 0.01
10 ESR() 1 0.1 0.01
10 1 Stable region 0.1 0.01 50 100 150 Output current IOUT(mA) Fig. 33 BH FB1WHFV/WG Stable operating region characteristics (Example) 0 0 100 200 Output current IOUT(mA) 300
Stable region
Stable region
0
50 100 Output current IOUT(mA)
150
Fig. 32 BH LB1WHFV/WG Stable operating region characteristics (Example)
Fig. 34 BH MA3WHFV Stable operating region characteristics (Example)
Other precautions * Over current protection circuit The IC incorporates a built-in over current protection circuit that operates according to the output current capacity. This circuit serves to protect the IC from damage when the load is shorted. The protection circuits use fold-back type current limiting and are designed to limit current flow by not latching up in the event of a large and instantaneous current flow originating from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. * Thermal shutdown circuit This system has a built-in thermal shutdown circuit for the purpose of protecting the IC from thermal damage. As shown above, this must be used within the range of power dissipation, but if the power dissipation happens to be continuously exceeded, the chip temperature increases, causing the thermal shutdown circuit to operate. When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation immediately after the chip temperature decreases, so the output repeats the ON and OFF states. There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to avoid leaving the IC in the overloaded state. * Actions in strong magnetic fields Use caution when using the IC in the presence of a strong magnetic field as such environments may occasionally cause the chip to malfunction. * Back current In applications where the IC may be exposed to back current flow, it is recommended to create a route t dissipate this current by inserting a bypass diode between the VIN and VOUT pins. * GND potential Ensure a minimum GND pin potential in all operating conditions. In addition, ensure that no pins other than the GND pin carry a voltage less than or equal to the GND pin, including during actual transient phenomena.
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6/8
2009.11 - Rev. B
BH FB1WG series, BHFB1WHFV series, BH LB1WG series, BHLB1WHFV series,
BH MA3WHFV series,
Technical Note
Noise terminal (BH MA3WHFV) The terminal is directly connected to inward normal voltage source. Because this has low current ability, load exceeding 100nA will cause some instability at the output. For such reasons, we urge you to use ceramic capacitors which have less leak current. When choosing noise the current reduction capacitor, there is a trade-off between boot-up time and stability. A bigger capacitor value will result in lesser oscillation but longer boot-up time for VOUT.
100 VOUT startup time t (msec)
10
1
BH30MA3WHFV ~ Condition ~ VIN=4.0V Cin=1.0F Co=1.0F ROUT=3.0k Ta=25C
0.1
0.01 100P
1000P
0.01
0.1
noise-filtering capacitor capacitance Cn (F)
Fig. 35: VOUT startup time vs. noise-filtering capacitor capacitance characteristics (Example)
Regarding input pin of the IC This monolithi c IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when a resistor and transistor are connected to pins as shown in Fig.37 The P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or GND > (Pin B) for the transistor (NPN). Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described above combines with the N layer of other adjacent elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltage lower than the GND (P substrate) voltage to input pins.
Transistor (NPN)
(Terminal A) Resistor
back current
VCC
OUT
CTL
GND
Fig. 36: Example of bypass diode connection
(Terminal B) C B E
(Terminal B) O
B E
GND
P+ N N P P-board Parasitic element GND N P P+
N P+ N N P N P P+
Other adjacent elements
GND Parasitic elements
(Terminal A) Parasitic element
Parasitic elements
GND
GND
Fig.37 Part number selection
BH
ROHM part number
30
Output voltage
FB1
Current capacity MA3 : 300mA FB1 : 150mA LB1 : 150mA
W
Shutdown switch W : With switch
HFV
Package HFV : HVSOF6 HVSOF5 G : SSOP5
-
TR
Package specification TR : Embossed taping
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7/8
2009.11 - Rev. B
BH FB1WG series, BHFB1WHFV series, BH LB1WG series, BHLB1WHFV series,
BH MA3WHFV series,
Technical Note
(Unit:mm)
(1.8MAX.)
(Unit:mm)
2.90.2
5 4
(Unit:mm)
1.60.05 0.8 0.3 (0.91)
54 4 5
0.2Max.
(0.05)
(1.5) (1.2) (1.4) (0.15) (0.45)
+6 4 - 4 0.2Min.
1.60.1
654
2.80.2
1.6 -0.1
+0.2
(0.41)
1
2
3
1.60.05
123
321
0.130.05
3.00.1
123
1.00.05
(1.28MAX.)
1.20.05
1.25Max.
(2.8MAX.)
0.75Max.
2.60.1
0.13
+0.05 -0.03
0.1450.05
1.10.05
0.050.05
0.42 +0.05 -0.04 0.95 0.1
S 0.1 S 0.220.05
0.6Max.
0.220.05 0.5
0.5
SSOP5
HVSOF5
HVSOF6
(Package Specification) SSOP5, HVSOF5
Package Form Package Quantity Package Orientation Embossed taping 3000pcs TR (When the reel is held with the left hand and the tape is drawn out with the right hand, the No. 1 pin of the product faces the upper right direction.)
(Package Specification) HVSOF6
Package Form Package Quantity Package Orientation Embossed taping 3000pcs TR (When the reel is held with the left hand and the tape is drawn out with the right hand, the No. 1 pin of the product faces the upper right direction.)
No. 1 pin Reel
Pulling side
* Please make orders in multiples of the package quantity.
* Please make orders in multiples of the package quantity.
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8/8
2009.11 - Rev. B
Notice
Notes
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